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| (Standard type) TESTING VDE (Reinforced type) GU (General Use)-E Type [1-Channel (Form B) Type] PhotoMOS RELAYS 4. Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, whereas the PhotoMOS relay has only 100 pA even with the rated load voltage of 400 V (AQV414E). 5. Reinforced insulation 5,000 V type also available. More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). , , 8.80.05 .346.002 6.40.05 .252.002 3.90.2 .154.008 8.80.05 .346.002 , , Cross section of the normally-closed type of power MOS 6.40.05 .252.002 Passivation membrane Intermediate Source electrode Gate electrode insulating membrane Gate oxidation membrane 3.60.2 .142.008 N+ P+ N+ N+ P+ N+ N- mm inch Drain electrode 1 2 3 N+ 6 5 4 FEATURES 1. Low on resistance for normallyclosed type This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. 2. Controls low-level analog signals PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 3. High sensitivity, low ON resistance Can control a maximum 0.13 A load current with a 5 mA input current. Low ON resistance of 18 (AQV410EH). Stable operation because there are no metallic contact parts. TYPICAL APPLICATIONS * Security equipment * Telepone equipment (Dial pulse) * Measuring equipment TYPES Part No. Output rating* Type I/O isolation voltage Through hole terminal Tube packing style AQV414E AQV410EH AQV414EH AQV414EA AQV410EHA AQV414EHA Surface-mount terminal Tape and reel packing style Picked from the Picked from the 1/2/3-pin side 4/5/6-pin side AQV414EAX AQV410EHAX AQV414EHAX AQV414EAZ AQV410EHAZ AQV414EHAZ Packing quantity Load voltage 400 V 350 V 400 V Load current 120 mA 130 mA 120 mA Tube 1 tube contains 50 pcs. 1 batch contains 500 pcs. Tape and reel AC/DC type 1,500 V AC (Standard) 5,000 V AC (Reinforced) 1,000 pcs. *Indicate the peak AC and DC values. Note: For space reasons, the package type indicator "X" and "Z" are omitted from the seal. RATING 1. Absolute maximum ratings (Ambient temperature: 25C 77F) Item LED forward current LED reverse voltage Peak forwrd current Power dissipation Load voltage (peak AC) Continuous load current Output Peak load current Power dissipation Total power dissipation I/O isolation voltage Temperature limits Operating Storage Ipeak Pout PT Viso Topr Tstg Symbol IF VR IFP Pin VL IL A B C Type of connection AQV414E(A) AQV410EH(A) AQV414EH(A) 50 mA 3V 1A 75 mW 350 V 0.13 A 0.15 A 0.17 A 0.4 A 500 mW 550 mW 5,000 V AC Remarks Input f = 100 Hz, Duty factor = 0.1% 400 V 0.12 A 0.13 A 0.15 A 0.3 A 400 V 0.12 A 0.13 A 0.15 A 0.3 A A connection: Peak AC, DC B,C connection: DC A connection: 100 ms (1 shot), VL = DC 1,500 V AC 5,000 V AC Non-condensing at low temperatures -40C to +85C -40F to +185F -40C to +100C -40F to +212F 125 AQV414E, AQV41rEH 2. Electrical characteristics (Ambient temperature: 25C 77F) Item LED operate (OFF) current Input LED reverse (ON) current LED dropout voltage Typical Maximum Minimum Typical Typical Maximum Typical Maximum Typical On resistance Output Maximum Typical Ron Maximum Off state leakage current Operate (OFF) time* Reverse (ON) time* Maximum Typical Maximum Typical Maximum Typical Maximum Minimum ILeak Toff Ton Ciso Riso -- -- -- -- -- C Ron B Type of Symbol connection IFoff IFon VF Ron -- -- -- A AQV414E(A) 1.45 mA AQV410EH(A) AQV414EH(A) Condition IL= Max. IL= Max. IF= 5 mA IF = 0 mA IL= Max. Within 1 s on time IF= 0 mA IL= Max. Within 1 s on time IF= 0 mA IL= Max. Within 1 s on time IF= 5 mA VL = Max. IF = 0 mA 5 mA IL = Max. IF= 5 mA 0 mA IL = Max. f = 1 MHz VB = 0 500 V DC For type of connection, see Page 32. 1.9 mA 1.75 mA 3.0 mA 0.3 mA 0.4 mA 0.3 mA 1.40 mA 1.8 mA 1.70 mA 1.14 V (1.25 V at IF= 50 mA) 1.5 V 26 18 25.2 50 20 25 10 12.5 1 A 0.7 ms 2.0 ms 0.1 ms 1.0 ms 0.8 pF 35 13 17.5 6.5 8.8 10 A 1.5 ms 3.0 ms 0.3 ms 1.5 ms 0.8 pF 1.5 pF 1,000 M 50 19 25 10 12.5 10 A 1.3 ms 3.0 ms 0.3 ms 1.5 ms 0.8 pF Switching speed Transfer characteristics I/O capacitance Initial I/O isolation resistance Note: Recommendable LED forward current Standard type IF = 5 mA Reinforced type IF = 5 to 10 mA *Operate/Reverse time Input Output 10% 90% Toff Ton s For Dimensions, see Page 27. s For Schematic and Wiring Diagrams, see Page 32. s For Cautions for Use, see Page 36. REFERENCE DATA 1. Load current vs. ambient temperature characteristics Allowable ambient temperature: -40C to +85C -40F to +185F Type of connection: A 140 120 Load current, mA 100 80 60 40 10 20 AQV414E 0 -40 -20 0 20 40 60 80 85 100 Ambient temperature, C 0 -40 -20 0 20 40 60 80 85 Ambient temperature, C 0 -40 -20 0 20 40 60 80 85 Ambient temperature, C AQV410EH AQV414E(H) 2. On resistance vs. ambient temperature characteristics Measured portion: between terminals 4 and 6; LED current: 0 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 50 3. Operate (OFF) time vs. ambient temperature characteristics LED current: 5mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 5.0 Operate (OFF) time, ms On resistance, 40 4.0 AQV410EH AQV414EH 30 AQV414(EH) 3.0 20 AQV410EH 2.0 1.0 126 AQV414E, AQV41rEH 4. Reverse (ON) time vs. ambient temperature characteristics LED current: 5 mA; Load voltage: Max. (DC); Continuous load current: Max. (DC) 0.8 5. LED operate (OFF) current vs. ambient temperature characteristics Load voltage: Max. (DC); Continuous load current: Max. (DC) LED operate (OFF) curremt, mA 5 6. LED reverse (ON) current vs. ambient temperature characteristics Load voltage: Max. (DC); Continuous load current: Max. (DC) 5 LED reverse (ON) current, mA Reverse (ON) time, ms 0.6 AQV410EH AQV414EH 4 AQV410EH AQV414EH 3 4 AQV410EH AQV414EH 3 0.4 2 AQV414E 1 2 AQV414E 0.2 AQV414E 0 1 -40 -20 0 20 40 60 80 85 Ambient temperature, C 0 -40 -20 0 20 40 60 8085 Ambient temperature, C 0 -40 -20 0 20 40 60 80 85 Ambient temperature, C 7. LED dropout voltage vs. ambient temperature characteristics LED current: 5 to 50 mA 1.5 LED dropout voltage, V 1.4 1.3 1.2 1.1 1.0 0 50mA 30mA 20mA 10mA 5mA 8. Voltage vs. current characteristics of output at MOS portion Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F 140 AQV410EH 120 100 AQV414EH 80 60 AQV414E 40 20 -3 -2.5 -2 -1.5 -1 -0.5 0.5 1 1.5 2 2.5 3 -20 Voltage, V -40 -60 -80 -100 -120 -140 Current, mA 9. Off state leakage current Measured portion: between terminals 4 and 6; LED current: 5 mA; Ambient temperature: 25C 77F Off state leakage current, A 10 -3 10 -6 10 -9 10 -12 0 20 40 60 80 Load voltage, V 100 -40 -20 0 20 40 60 80 85 Ambient temperature, C 10. LED forward current vs. operate (OFF) time characteristics Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 10.0 Operate (OFF) time, ms 11. LED forward current vs. reverse (ON) time characteristics Measured portion: between terminals 4 and 6; Load voltage: Max. (DC); Continuous load current: Max. (DC); Ambient temperature: 25C 77F 0.5 AQV414EH 12. Applied voltage vs. output capacitance characteristics Measured portion: between terminals 4 and 6; Frequency: 1 MHz; Ambient temperature: 25C 77F 120 Output capacitance, pF 100 80 60 40 20 0 AQV410EH AQV414EH Reverse (ON) time, ms 8.0 0.4 6.0 0.3 AQV410EH 4.0 0.2 AQV414E 0.1 2.0 AQV414E 50 20 30 40 LED forward current, mA 0 10 0 0 10 20 30 40 50 LED forward current, mA 60 10 20 30 40 50 Applied voltage, V 5/7/2001 All Rights Reserved, (c) Copyright Matsushita Electric Works, 127 Ltd. Go To Online Catalog |
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